The effect of In or SiO2 capping on thermally-induced interdiffusion in quantum-well structures was investigated by using spin-tracing methods which were based upon exciton Zeeman-splitting measurements. The results showed that the diffusion of Mn which occurred at interfaces during annealing was strongly enhanced in the case of In-capped samples. However, SiO2 protective layers inhibited diffusion of Mn across the interfaces; even in the case of In-capping. The degree of interdiffusion was found to be related to Cd and Te evaporation from the samples, as measured by using Rutherford back-scattering; thus indicating that an important role was played by cation vacancies in the interdiffusion process.

S.Maćkowski, N.T.Khoi, A.Golnik, P.Kossacki, J.A.Gaj, E.Kamińska, A.Piotrowska, G.Karczewski, T.Wojtowicz, J.Kossut: Solid State Communications, 1998, 107[6], 267-71