Epitaxial layers were grown, using metalorganic vapor-phase epitaxy, onto (001)-oriented GaAs. A microstructural study of the defect content of these layers was carried out by using scanning electron microscopy, reflection high-energy electron diffraction, transmission electron microscopy, and microdiffraction techniques. An investigation of epilayers in the [110] and [1¯10] orientations revealed a marked anisotropy in the defect content of the ZnSe/ZnS layers. Micro-twins were found only in the [1¯10] samples, while an examination of the same layers along the orthogonal [110] projection revealed only misfit dislocations. The effects of the differential motion of α and β dislocations in the sphalerite structure were considered.

P.D.Brown, G.J.Russell, J.Woods: Journal of Applied Physics, 1989, 66[1], 129-36