High-resolution Laplace defect spectroscopy was used to study the fine structure of the electron emission process of DX(Sn) centers in AlxGa1-xAs, where x was 0.26 or 0.53. Two groups of peaks, in the spectra of electron emission rates, were found to correspond to two DX-like centers which were observed by using deep-level transient spectroscopy. The line-splitting in both groups arose from an alloy disorder effect which was attributed to the differing local configurations of Al and Ga atoms around two DX-like centers.

Fine structure of DX(Sn) centers in AlxGa1-xAs H.H.Zhan, J.Y.Kang, Z.Y.Wu, Q.S.Huang: Journal of Applied Physics, 1998, 84[5], 2497-500