A deep-level spectroscopic analysis was made of electron emission from Si-related DX centers. Two predominant deep levels of DX centers were observed in AlGaAs with various AlAs mole fractions, and in heavily-doped GaAs. Alloy disorder in AlGaAs could not explain the existence of these 2 distinct levels; which was independent of the alloy composition.

Evidence for two Si-related DX-like centers in AlxGa1-xAs and GaAs S.Ghosh, V.Kumar: Solid State Communications, 1998, 106[3], 163-8