Hole capture at DX centers was detected, in Schottky diodes on Te-doped material, under forward-bias conditions. Capacitance versus voltage measurements, performed at low temperatures, showed that the occupancy of the DX centers was affected by sufficiently large forward biases. The current densities which were required to achieve such modifications were at least an order of magnitude smaller than those required in Si-doped material. Positive deep-level transient spectroscopy signals were detected in all of the samples when forward-bias filling pulses were used. The observations were explained in terms of minority carrier (hole) injection and subsequent capture by DX centers.

Minority carrier capture at DX centers in AlGaSb Schottky diodes E.Gombia, R.Mosca, S.Franchi, C.Ghezzi, R.Magnanini: Journal of Applied Physics, 1998, 84[9], 5337-41