The properties of deep levels in Te-doped material which had been grown via metalorganic chemical vapor deposition were studied. By using a pn-junction structure, both minority and majority carrier traps could be observed. Two deep levels were found in Te-doped samples. One was a majority-carrier trap and the other a minority-carrier trap. The activation energies of majority and minority carrier traps were 0.24 and 0.25eV, respectively. The majority carrier trap was uniformly distributed, thus indicating that this level was linked to some kind of bulk defect.

Majority- and minority-carrier traps in Te-doped AlInP Y.R.Wu, W.J.Sung, W.I.Lee: Applied Physics Letters, 1999, 74[2], 284-6