The growth of molecular beam epitaxial BeSe on vicinal Si(001) substrates was investigated by using reflection high-energy electron diffraction. Efforts were made, in the early stages of growth, to optimize the interface quality. Transmission electron microscopy revealed a BeSe layer that was relaxed by misfit dislocations and stacking faults that were found mainly near to the interface.

Heteroepitaxial growth of BeSe on vicinal Si(001) surfaces C.Chauvet, P.Venneguès, P.Brunet, E.Tournié, J.P.Faurie: Applied Physics Letters, 1998, 73[7], 957-9