Thin films were grown on Pyrex or Mo-coated glass substrates by using metalorganic chemical vapor deposition and a selection of organometallic sources. Single-phase samples were grown which had a preferential orientation along the (112) plane, and a full-width at half-maximum, of the <112> peak, about 0.15º. The photoluminescence spectrum was characterized by a broad emission at 1.3eV, and a sharper peak at higher energies which involved native defects such as VCu and VSe.

Growth of CuGaSe2 thin films by metalorganic chemical vapour deposition N.Romain, G.Orsal, M.C.Artaud, S.Duchemin: Solid State Phenomena, 1999, 67-68, 373-8