Single crystals were grown using a horizontal Bridgman method. On the basis of the temperature variation of the Hall coefficient, the p-type specimens were classified into deep, shallow or a combination of these. The activation energies of acceptors were deduced to be 0.05 to 0.06eV for In vacancies and 0.01 to 0.02eV for Cu vacancies and Cu atoms in In sites. The donors, whose densities decreased during annealing in a Se atmosphere, were attributed to Se vacancies with an activation energy of 0.01eV. The optical band-gaps of the deep- and mixed-type samples were estimated to be 1.04eV at 0K, but that of the shallow-type samples was 1.0eV. A photoluminescence peak was observed at 0.97 to 0.98eV for the deep- and mixed-type samples, plus other emissions at about 1.00 and 1.04eV while, for shallow-type samples, the peaks were observed at 0.93 and/or 0.95 to 0.96eV. The activation energies of donors were equal to about 0.03eV for In atoms in Cu sites and 0.05 to 0.01eV for Se vacancies.

Defect properties of CuInSe2 single crystals H.Matsushita, T.Takizawa: Japanese Journal of Applied Physics - 1, 1998, 37[8], 4258-63