Single crystals were prepared under conditions which suppressed the occurrence of twinning. This involved growth from an In melt; using the travelling heater method to maintain the growth temperature below the sphalerite-chalcopyrite phase transition. The resultant crystals were n-type and could be converted to p-type by Se annealing. Both n-type and p-type crystals were characterized by means of X-ray diffraction, microprobe analysis, atomic force microscopy and scanning electron microscopy. They were found to be mostly homogeneous, and twin-free.

Growth of single CuInSe2 crystals via the travelling heater method V.Lyahovitskaya, S.Richter, F.Frolow, L.Kaplan, Y.Manassen, K.Gartsman, D.Cahen: Journal of Crystal Growth, 1999, 197[3], 177-85