A dynamic breakdown of metastable centers in Ga0.7Al0.3As, which was caused by fast-ramped electric fields, was studied. The electrical breakdown was found to begin suddenly above a threshold field of 1.71 x 105V/cm. The breakdown was explained in terms of the ionization of DX centers by hot carriers.

DX center breakdown in high electric fields A.Dargys, N.Zurauskienė, E.Goovaerts, C.Van Hoof, G.Borghs: Materials Science Forum, 1999, 297-298, 25-8