Dynamic electrical breakdown in the depleted Ga0.7Al0.3As region of p+-i-n+ diodes was investigated at the ns time-scale. A persistent conductivity, due to Si-related DX centre impact ionization in high electric fields was observed after the onset of the breakdown. It was deduced that DX centre breakdown began at electric fields of 1.8 x 105V/cm and was related to the impact ionization of DX centres by free hot carriers.

Dynamic DX centre breakdown in sub-micrometre AlGaAs/GaAs structures A.Dargys, N.Zurauskienė, E.Goovaerts, C.Van Hoof, G.Borghs: Semiconductor Science and Technology, 1999, 14[1], 81-4