Metalorganic chemical vapor deposited Ga0.85Al0.15As on Si was subjected to rapid thermal annealing and was investigated by means of photoluminescence, scanning electron microscopy, Auger electron spectroscopy, secondary ion mass spectrometry and double-crystal X-ray diffraction measurements. The photoluminescence intensity increased significantly after rapid thermal annealing (850C, 10s). Quenching of the photoluminescence intensity was observed above 900C. An emission at 1.515eV was observed only in samples which were annealed at 900 or 950C, and was attributed to the formation of a Si-related complex defect. Auger electron spectroscopy and secondary ion mass spectrometric measurements revealed Si diffusion, from the top surface and into the epilayer, at higher annealing temperatures. This diffusion was accounted for by a gas-phase reaction.

Investigation of a rapid thermally annealed Al0.15Ga0.85As/Si structure S.Saravanan, J.Arokiaraj, T.Jimbo, T.Soga, M.Umeno: Japanese Journal of Applied Physics - 2, 1998, 37[5A], L496-8