It was demonstrated that the interchange of foreign impurity atoms by super-diffusion between substitutional and interstitial sites, which occurred during the diffusion of impurities in damage-free GaAs due to electron-beam doping, was controlled by the kick-out mechanism. Their diffusion profiles in semiconductors were found to be in good agreement with exact solutions to the Seeger theory of kick-out diffusion.

Electron beam doping in damageless regions of semiconductors by the kick-out mechanism T.Wada, H.Fujimoto: Japanese Journal of Applied Physics - 1, 1998, 37[12B], 6998-7005