The removal of excess As and P atoms, adsorbed on (100) surfaces, by atomic H bombardment was investigated by using reflection high-energy electron diffraction and X-ray photo-electron spectroscopy. It was found that the excess As and P atoms were effectively removed by atomic H bombardment at 350C. An attempt was made to obtain high-quality GaAs epitaxial layers and an ordered (GaAs)1(GaP)3 strained short-period super-lattice with abrupt GaAs/GaP interfaces by low-temperature growth under atomic H bombardment. The quality and abruptness were evaluated by using photoluminescence, deep-level transient spectroscopic and transmission electron microscopic methods. It was demonstrated that the density of point defects in the GaAs epitaxial layer was reduced, and that an abrupt GaAs/GaP interface was formed, under these conditions.

Reduction of point defects and formation of abrupt hetero-interfaces in low-temperature molecular beam epitaxy of GaAs and GaP under atomic hydrogen irradiation M.Yokozeki, H.Yonezu, T.Tsuji, K.Aizawa, N.Ohshima: Japanese Journal of Applied Physics - 1, 1998, 37[9A], 4726-31