A thermoelastic analysis was developed for the prediction of slip-defect generation in (001) wafers. It was based upon a finite-element method which took account of the anisotropic structure and slip system of dislocations. Analysis of a completely circular wafer predicted that longer slip defect lines would be generated at the wafer edge, so that their angle with respect to [100] was predicted to be about 90n + 22.5º or 90n + 64.5º. The predictions agreed well with the results of wafer-heating experiments. This demonstrated that the present anisotropic analysis was more accurate than the simple isotropic analysis. The latter predicted slip-defect generation at the wafer edge such that the angle with respect to [100] would be 45n + 22.5º. The present thermoelastic analysis also confirmed that longer slip-defect lines were more likely to be generated at a (110) orienting flat edge, than at the circular edge.

Thermoelastic analysis of slip defect generation on GaAs wafers S.Sawada, H.Yoshida, M.Kiyama, R.Nakai: Japanese Journal of Applied Physics - 1, 1998, 37[10], 5457-64