Current transport in samples which were grown by means of molecular beam epitaxy at about 400C was investigated. A model was proposed which explained the direct role that was played by deep defects in assisting tunnelling from Schottky contacts where, due to rapidly changing potentials, the WKB approximation could not be used. The indirect role which was played by defects in diffusion processes in these materials was also investigated. Because the defect which best fitted the model had an activation energy of about 0.5eV, the annealing behavior suggested that the As interstitial possessed all of the requisite properties of the defect in question.

Role of intermediate temperature molecular beam epitaxy grown GaAs defects in tunnelling and diffusion A.E.Youtz, B.Nabet: Journal of Applied Physics, 1998, 84[5], 2697-704