Vapor-phase epitaxial structures were investigated by using transient acousto-electric spectroscopy. Four types of defect (EL3, EL5, EL6, EL17) were identified at the interface between substrate and epilayer. Measurements were made of the associated cross-section for electron capture, relaxation times of trapped charge and energy levels in the forbidden zone.

Characterization of interface deep levels in As vapor-grown epi-GaAs I.V.Ostrovskii, O.J.Olikh: Solid State Communications, 1998, 107[7], 341-3