A new acousto-electric method was used to study solid-state layered structures. The method was based upon transient transverse acousto-electric voltage measurements. Decay of the voltage signal was monitored when the surface acoustic wave which produced the signal was switched off. The results demonstrated that the transient acousto-electric technique was an effective method for characterizing trapping centres in the bulk, and at surfaces or interfaces, of epitaxial semiconductor structures.

Determination of deep-level parameters in epi-GaAs I.V.Ostrovskii, S.V.Saiko, H.G.Walther: Journal of Physics D, 1998, 31[18], 2319-25