The ability of the slow-positron beam technique to characterize defects in the near-surface region and in thin epitaxial layers was demonstrated by applying it to defect-rich low-temperature-grown GaAs layers, and to near-surface defects which were introduced by sawing GaAs wafers using a diamond wheel.

The slow positron beam technique R.Krause-Rehberg, S.Eichler, J.Gebauer, F.Börner: Solid State Phenomena, 1998, 63-64, 291-300