Reflectance anisotropy spectroscopy and low-energy electron diffraction studies were made of (113) surfaces which had been prepared by molecular beam epitaxy and metalorganic vapor-phase epitaxy. Two different static (non-growth) reconstructions were identified. Under many conditions, the familiar (8 x 1) reconstruction was observed while, under more As-rich conditions, a reconstruction having p(1 x 1) symmetry appeared. The activation energy for the transition from the p(1 x 1) reconstruction to the (8 x 1) reconstruction was estimated to be 1.50eV.

Reconstructions of the GaAs (113) surface M.Pristovsek, H.Menhal, T.Wehnert, J.T.Zettler, T.Schmidtling, N.Esser, W.Richter, C.Setzer, J.Platen, K.Jacobi: Journal of Crystal Growth, 1998, 195[1-4], 1-5