It was shown that a vacancy-control model could explain an experimentally observed negative dependence upon the stress temperature of heterojunction degradation by non-radiative defects. A study of the driving force for degradation, versus bias stress temperature, revealed a decreasing temperature dependence.

Kinetics of non-radiative defect-related degradation in GaAs/AlGaAs heterojunction bipolar transistors H.Wang, G.I.Ng, A.A.Hopgood: Journal of Physics D, 1998, 31[21], 3168-71