Photoluminescence techniques and repetitive thermal annealing were used to study interdiffusion in a 10nm single quantum well at temperatures of between 750 and 1050C. (figure 2). The diffusion equations and the Schrödinger equation were solved numerically in order to obtain composition profiles and the electron to heavy-hole transition energies. The intermixing process was shown to obey Fick's second law, and the associated activation energy was 2eV.

Intermixing in GaAsSb/GaAs single quantum wells O.M.Khreis, K.P.Homewood, W.P.Gillin, K.E.Singer: Journal of Applied Physics, 1998, 84[7], 4017-9

Figure 2

Interdiffusion in GaAsSb/GaAs