A study was made of interdiffusion, on the group-V sub-lattice in thermally annealed undoped strained single quantum-wells, by using contactless electroreflectance spectroscopy. It was shown that interdiffusion in this system was Fickian. The estimated activation energy for interdiffusion (figure 3) was 1.5eV. This value was low when compared with those for other III-V alloy-based heterostructures.

Contactless electroreflectance study of interdiffusion in heat-treated GaAs1-xSbx/GaAs single quantum wells S.Ghosh, B.M.Arora, K.P.Homewood, W.P.Gillin, O.M.Khreis, K.E.Singer: Journal of Physics - Condensed Matter, 1998, 10[43], 9865-74

Figure 3

Interdiffusion in GaAsSb/GaAs