Nominally undoped superlattices were annealed at temperatures of between 900 and 1100C in a closed quartz ampoule. A marked dependence of the interdiffusion coefficient upon As vapor pressure was detected by using either secondary-ion mass spectroscopy or high-resolution X-ray diffraction. The interdiffusion was low in the Ga-rich regime, where the data could be described by:

D (cm2/s) = 7.1 x 10-12 exp[-1.5(eV)/kT]

In the As-rich regime, the data could be described by:

D (cm2/s) = 7.8 x 10-9 exp[-2.0(eV)/kT]

Interdiffusion in GaAs1-xSbx/GaAs superlattices S.Senz, U.Egger, M.Schultz, U.Gösele, H.Ito: Journal of Applied Physics, 1998, 84[5], 2546-50