Strain relaxation in Ga0.955In0.045As epilayers which had been grown, using molecular-beam epitaxy, onto (001) GaAs substrates was studied by means of monochromatic synchrotron X-radiation topography. A striation pattern, parallel to the [110] direction, was observed in all topographs of samples which had been grown in a non-uniform temperature distribution. Such a pattern had never been observed in specimens grown with a uniform temperature across the wafer. On the basis of a detailed analysis of the contrast, it was concluded that twins had formed. These twins, which were associated with oval defects, appeared to relax a small proportion of the strain in the epilayer; without dislocation formation.

Partial strain relaxation in (In,Ga)As epilayers on GaAs by means of twin formation K.Mizuno, P.Mock, B.K.Tanner, G.Lacey, C.R.Whitehouse, G.W.Smith, A.M.Keir: Journal of Crystal Growth, 1999, 198-199[1-4], 1146-50