Electron-induced disordering in CuPt-ordered samples was examined by means of in situ photoluminescence and cathodoluminescence spectroscopy in a transmission electron microscope. A decrease in luminescence intensity was observed following electron irradiation using energies above 120keV. It was shown that the decrease was due to Frenkel-type defects, on the Ga and In sub-lattices, which were generated by electron irradiation. The threshold electron energies for the displacement of Ga and In atoms were estimated to be 145 and 120keV, respectively. It was proposed that electron irradiation-induced migration of group-III (Ga and In) vacancies dominated disordering at doses below 2 x 1020/cm2. Spontaneous recombination of group-III vacancies and interstitials dominated disordering at doses above 5 x 1021/cm2.

Vacancy migration-mediated disordering in CuPt-ordered (Ga,In)P Y.Ohno, Y.Kawai, S.Takeda: Physical Review B, 1999, 59[4], 2694-9