Samples of p-type material were investigated, following room-temperature bombardment with 3.1MeV protons, by using deep-level transient Fourier spectroscopy. The radiation damage consisted of several closely-spaced peaks; one of which may have existed in the as-grown samples. The energy levels of 3 of the new traps were determined although, being so closely spaced, these could be reliably measured only after annealing to eliminate shoulders. The spectrum, and its annealing behavior, were explained in terms of the superposition of GaP and InP levels. Among the peaks, 2 of the radiation-induced levels were associated with a Ga vacancy and a P Frenkel defect.

Majority carrier traps in proton-irradiated GaInP J.R.Dekker, A.Tukiainen, R.Jaakkola, K.Väkeväinen, J.Lammasniemi, M.Pessa: Applied Physics Letters, 1998, 73[24], 3559-61