A deep-level transient spectroscopic study was made of the properties of the defects which were introduced into epitaxially grown n-type material during 2MeV proton bombardment. The main defects which were detected, ER2 and ER3, were introduced at rates of 400 and 600/cm, respectively, and had energy levels at 0.16 and 0.20eV, respectively, below the conduction band. A less prominent defect, ER1, with an energy level at 0.13eV below the conduction band, was introduced at a rate of 30/cm. The small capture cross-section of ER3 (8 x 10-18cm2) implied that it was in a neutral or negative state when above the Fermi level.

Proton bombardment-induced electron traps in epitaxially grown n-GaN F.D.Auret, S.A.Goodman, F.K.Koschnick, J.M.Spaeth, B.Beaumont, P.Gibart: Applied Physics Letters, 1999, 74[3], 407-9