The dislocation distributions and emission profiles of sublimation lateral overgrown and metalorganic chemical vapor deposited films were studied by using transmission electron microscopic and cathodoluminescence techniques. A close relationship was observed between the emission profile and the dislocation distribution. The results showed that the dislocations not only affected the band edge emission, but also the yellow emission. It was observed that the dislocations propagated laterally in the overgrowth region.

Configuration of dislocations in lateral overgrowth GaN films M.Hao, S.Mahanty, T.Sugahara, Y.Morishima, H.Takenaka, J.Wang, S.Tottori, K.Nishino, Y.Naoi, S.Sakai: Journal of Applied Physics, 1999, 85[9], 6497-501