A study was made of the photoluminescence excitation spectra of Mg-doped n-type material which had been prepared by hydride vapor-phase epitaxy. Defect-related red and blue emission bands around 1.85 and 2.90eV, respectively, were observed in addition to the yellow emission band. The red and blue bands were attributed to recombination which involved the same Mg-related defects; according to the result of thermal annealing experiments. The photoluminescence excitation spectra of the red, yellow and blue emission bands showed that all of them could be interpreted in terms of a configuration coordinate diagram. The blue emission at 2.90eV was attributed to a transition from the conduction band to the Mg-related deep acceptors. The configuration coordinate diagram showed that the yellow luminescence was due to transition from a deep donor state to a shallow acceptor state.

Defect-related luminescence of Mg-doped n-GaN grown by hydride vapour-phase epitaxy C.Lee, J.E.Kim, H.Y.Park, S.T.Kim, H.Lim: Journal of Physics - Condensed Matter, 1998, 10[48], 11103-10