Hole trap levels in Mg-doped material which had been grown by metalorganic vapor phase epitaxy were studied using deep-level transient spectroscopy. The Mg concentration was 4.8 x 1019/cm3, but the hole concentration was as low as 1.3 x 1017/cm3 at room temperature. The deep-level transient spectrum had a dominant peak, with an activation energy of 0.41eV, accompanied by 2 additional peaks with activation energies of 0.49eV and 0.59eV. It was found that the dominant peak consisted of 5 peaks; each of which had a different activation energy and capture cross-section. Their appearance was linked to Mg-N-H complexes.

Hole trap levels in Mg-doped GaN H.Nagai, Q.S.Zhu, Y.Kawaguchi, K.Hiramatsu, N.Sawaki: Applied Physics Letters, 1998, 73[14], 2024-4