Theoretical formation energies for various possible reconstructions, having 1 x 1 and 2 x 2 periodicities on (00•1) and (00•¯1) surfaces, were presented. It was found that, during molecular beam epitaxial growth in the (00•1) direction, 2 x 2 structures became stable under N-rich growth conditions while a Ga-rich environment was expected to yield structures having a 1 x 1 periodicity. With regard to molecular beam epitaxial growth on (00•¯1) surfaces, reconstructions with the 1 x 1 periodicity had low energies. During metal-organic chemical vapor deposition, where H-terminated surfaces could occur, 1 x 1 periodicities were found to be stable for both growth directions.

J.Elsner, M.Haugk, G.Jungnickel, T.Frauenheim: Solid State Communications, 1998, 106[11], 739-43