A theoretical study was made of various possible reconstructions, with 1 x 1 or 2 x 2 periodicity, on the (00•1) and (00•¯1) surfaces. It was found that, during molecular beam epitaxial growth in the <00•1> direction, 2 x 2 structures became stable under N-rich growth conditions whereas a Ga-rich environment was expected to give rise to structures with 1 x 1 periodicity. In the case of molecular beam epitaxial growth on (00•¯1) surfaces, reconstructions with 1 x 1 periodicity had low energies. During metalorganic chemical vapor deposition, where H-terminated surfaces could occur, 1 x 1 periodicities were found to be stable for both growth directions.

Theory of Ga, N and H terminated GaN (00•1)/(00•¯1) surfaces J.Elsner, M.Haugk, G.Jungnickel, T.Frauenheim: Solid State Communications, 1998, 106[11], 739-43