Liquid-encapsulated zone melting was used to grow Te-doped and undoped [100] single crystals under microgravity conditions. It was found that these crystals, and particularly the Te-doped ones, exhibited lower dislocation densities than those grown in a gravitational field. The dislocation density was also found to depend upon the solid/liquid interface shape, with a planar interface resulting in a lower dislocation density.

Microgravity growth of GaSb single crystals by the liquid encapsulated melt zone technique C.R.López, J.R.Mileham, R.Abbaschian: Journal of Crystal Growth, 1999, 200[1-2], 1-12