The effect of Al, on the defect structure of crystals which had been grown by using the vertical Bridgman technique, was investigated by monitoring cathodoluminescence in a scanning electron microscope. The crystals were found to be highly homogeneous along the growth axis; with the exception of the upper end, which exhibited Al accumulation. The cathodoluminescence results indicated the decoration of extended defects by Al but, contrary to the case of other dopants, the Al was not found to cause a significant reduction in native acceptors. A cathodoluminescence band at about 0.85eV appeared to be related to the presence of Al.

Decoration of extended defects in GaSb by Al doping P.Hidalgo, B.Méndez, J.Piqueras, P.S.Dutta, E.Dieguez: Solid State Communications, 1998, 108[12], 997-1000