Deep levels in single crystal were investigated by means of deep-level transient spectroscopy. The hole-trapping level was detected at 0.8eV above the valence band. It was found that the deep level was associated with a defect or defect complex, and that the concentration increased with increasing annealing temperature.

Annealing behavior of deep trap level in p-GaTe S.Shigetomi, T.Ikari, H.Nakashima: Japanese Journal of Applied Physics - 1, 1998, 37[6A], 3282-3