The effect of H upon Ge growth on Si(111) surfaces, using solid-phase epitaxy, was investigated by means of scanning tunnelling microscopy. During the solid-phase epitaxial growth of Ge films on H-terminated Si(111) surfaces, the formation of 3-dimensional Ge islands was suppressed. Following the desorption of H, three-dimensional Ge islands appeared on the Ge surface, and were considered to be formed via the agglomeration of Ge atoms. The activation energy for the migration of Ge atoms during the agglomeration was determined to be 0.3eV.

Hydrogen effects on the heteroepitaxial growth of Ge films on Si(111) surfaces M.Okada, A.Muto, I.Suzumura, H.Ikeda, S.Zaima, Y.Yasuda: Japanese Journal of Applied Physics - 1, 1998, 37[12B], 6970-3