The O-doping source, diethylaluminum ethoxide, was used to incorporate O-related defects during the growth of In0.5(Al,Ga)0.5P by metalorganic vapor phase epitaxy. Several defects were identified which were present in non-intentionally O-doped n-type samples, as well as those which were due to O. The latter introduced defect states near to the middle of the band gap.

Intrinsic and oxygen-related deep-level defects in In0.5(AlxGa1-x)0.5P J.G.Cederberg, B.Bieg, J.W.Huang, S.A.Stockman, M.J.Peanasky, T.F.Kuech: Journal of Crystal Growth, 1998, 195[1-4], 63-8