Structural processes were investigated with regard to the vertical stacking of strain-induced quantum dots. By using cross-sectional scanning and tunnelling microscopy, an investigation was made of In diffusion from InAs quantum dots. It was observed that large-scale vertical In diffusion occurred in the quantum-well regions. On the other hand, the In remained markedly stable in the dot region.

Vertical InAs diffusion and surface ordering processes in InAs vertical quantum dot columns G.S.Solomon, W.Wu, J.R.Tucker, J.S.Harris: Physica E, 2[1-4], 709-13