A study was made of plastic strain relief in this highly mismatched InAs/GaAs(001) system, which had been grown layer by layer. Misfit dislocation generation was observed to be anisotropic in the 2 perpendicular <110> directions. This was explained in terms of an interplay between the chemically inequivalent dislocation types, which were present in such compounds, and the applied growth conditions.

Anisotropic misfit dislocation nucleation in two-dimensional grown InAs/GaAs(001) heterostructures A.Trampert, K.H.Ploog, E.Tournié: Applied Physics Letters, 1998, 73[8], 1074-6