The effects of growth temperature and group-V/group-III flux ratio upon intermixing in molecular beam epitaxially grown multi-quantum wells were studied by using photoluminescence and repetitive thermal annealing methods. It was shown that, for a wide range of growth conditions (temperatures ranging from 565 to 636C and flux ratios ranging from 5:1 to 25:1) that interdiffusion was controlled only by a constant background concentration of vacancies which were probably introduced into the substrate during manufacture. It was shown that only growth at very low temperatures (470C) resulted in appreciable numbers of excess vacancies.

Interdiffusion in InGaAs/GaAs O.M.Khreis, K.P.Homewood, W.P.Gillin: Journal of Applied Physics, 1998, 84[1], 232-6