A study was made of the morphology of antiphase boundaries and their formation in CuAu-I-type ordered InGaAs which had been grown onto a vicinal (110)InP substrate. In the case of InGaAs which had been grown at 380C, antiphase boundaries formed parallel to (110) via the flow of 1-monolayer steps. In the case of InGaAs which had been grown at 450C, the normal directions of the antiphase boundaries were tilted slightly towards [00¯1] or [001] from (110). Some antiphase boundaries had a hairpin shape.

Formation mechanism of antiphase boundary structure in molecular beam epitaxially grown InGaAs/(110)InP Y.Kangawa, C.Kojima, N.Kuwano, K.Oki: Japanese Journal of Applied Physics - 1, 1999, 38[1A], 40-1