Deep-level transient spectroscopy was used to investigate deep-level defects in metalorganic chemical vapor-deposited and unintentionally doped p-type InGaAsN films that were lattice-matched to GaAs. The as-grown material exhibited a high concentration of deep levels within the band-gap, with a predominant hole trap at Ev+0.10eV. Post-growth annealing simplified the deep-level spectra and permitted the identification of hole traps at 0.10, 0.23 and 0.48eV above the valence-band edge, with concentrations of 3.5 x 1014, 3.8 x 1014 and 8.2 x 1014/cm3, respectively. A direct comparison of the as-grown and annealed spectra revealed the presence of an additional mid-gap hole trap with a concentration of 4 x 1014/cm3 in as-grown material. The concentration of this trap was sharply reduced by annealing. Of the 4 hole traps which were detected, only the 0.48eV level was unaffected by annealing.

Deep levels in p-type InGaAsN lattice-matched to GaAs D.Kwon, R.J.Kaplar, S.A.Ringel, A.A.Allerman, S.R.Kurtz, E.D.Jones: Applied Physics Letters, 1999, 74[19], 2830-2