Dopant diffusion in Zn-implanted material was investigated after rapid thermal annealing. At an as-implanted Zn concentration of about 4 x 1019/cm3, only some 7% of implanted Zn atoms formed electrically active shallow acceptors following annealing (950C, 15s). The low activation was attributed to rapid Zn out-diffusion, with only some 14% of the implanted dopant being retained after annealing. Saturation of the free hole concentration in Zn and P co-implanted samples was attributed to the formation of Zn interstitial donors and group-V related donor-type native defects.

Zinc and phosphorus co-implantation into indium phosphide K.M.Yu, M.C.Ridgway: Applied Physics Letters, 1998, 73[1], 52-4