The surface diffusion mechanism of selective re-growth around [110] and [¯110] etched mesas was investigated. A model was proposed on the basis that excess area growth in the immediate vicinity of mesas took place due to an accumulation of material which was fed by surface diffusion from the top of the mesa. The surface diffusion length and surface diffusion coefficient along the [¯110] direction (in the case of a [110] directional mesa) and [110] direction (in the case of a [¯110] directional mesa) were estimated for the first time. It was observed that the surface diffusion length and surface diffusion coefficient in the [¯110] direction were some 3 and 8 times higher than those in the [110] direction. Anisotropic growth behavior in these directions was attributed to the differences in the surface diffusion lengths.

Self-consistent model for InP selective regrowth by hydride vapor-phase epitaxy N.Gopalakrishnan, E.R.Messmer, S.Lourdudoss: Japanese Journal of Applied Physics - 1, 1999, 38[2B], 1037-9