Deep-level transient spectroscopy was used to study the predominant deep level, H4, which was created by electron irradiation. The characteristics of the H4 peak in Zn-doped samples were studied as a function of pulse duration, before and after annealing. The results showed that at least 2 traps contributed to the H4 peak. One of them was a fast trap and the other was a slow trap. This was demonstrated by several results concerning the activation energy, capture cross-section, full-width at half-maximum and peak temperature shift. It was shown that both traps were irradiation defects which were created in the P sub-lattice.

Evidence for two distinct defects contributing to the H4 deep-level transient spectroscopy peak in electron-irradiated InP B.Massarani, F.G.Awad, M.Kaaka, R.Darwich: Physical Review B, 1998, 58[23], 15614-9