The concentration of H-In vacancy complexes, VInH4, in liquid encapsulated Czochralski undoped or Fe-doped n-type samples was studied by using low-temperature infra-red absorption spectroscopy. The VInH4 complex was found to be a dominant intrinsic shallow donor defect with concentrations of up to about 1016/cm3 in as-grown liquid-encapsulated Czochralski material. The concentration of the VInH4 complex increased with the compensation ratio, in good agreement with a proposed defect formation model which predicted a Fermi-level dependent concentration of amphoteric defects.

Compensation-ratio dependent concentration of a VInH4 complex in n-type liquid-encapsulated Czochralski InP S.Fung, Y.W.Zhao, C.D.Beling, X.L.Xu, M.Gong, N.F.Sun, T.N.Sun, X.D.Chen, R.G.Zhang, S.L.Liu, G.Y.Yang, J.J.Qian, M.F.Sun, X.L.Liu: Applied Physics Letters, 1998, 73[9], 1275-7