An (001)-(2 x 1) reconstruction was prepared by metalorganic vapor-phase epitaxy. Scanning tunnelling microscopy and infra-red spectra of adsorbed H revealed that the (2 x 1) reconstruction was terminated by a complete layer of buckled P dimers; thus giving rise to p(2 x 2) and c(4 x 2) domains. A surface band-gap of 1.2eV was measured by means of scanning tunnelling spectroscopy. The buckling could be explained by electron correlations among the dangling bonds of pairs of P dimers. This permitted the surface to achieve a lower-energy semiconducting state. This reconstruction imitated the Si(100)-(2 x 1) reconstruction; which was terminated by buckled Si dimers.

Example of a compound semiconductor surface that mimics silicon L.Li, B.K.Han, Q.Fu, R.F.Hicks: Physical Review Letters, 1999, 82[9], 1879-82