Undoped <100> single crystals were grown by using the vertical gradient freezing method and a high-pressure furnace. By controlling the gas flow, temperature fluctuations near to the seed crystal were reduced from ±0.3C to ±0.03C. The axial temperature gradient was lower than 10C/cm, and the growth rate was higher than 0.4mm/h. Twin-free 10cm-diameter single crystals were obtained for the first time under these conditions. The average etch-pit density of the crystals was about 2000/cm2. This was less than that of conventional 7.5cm-diameter liquid-encapsulated Czochralski crystals.

Growth of 100mm-diameter <100> InP single crystals via the vertical gradient freezing method T.Asahi, K.Kainosho, T.Kamiya, T.Nozaki, Y.Matsuda, O.Oda: Japanese Journal of Applied Physics - 1, 1999, 38[2B], 977-80